Inventor · Tainan, TW

Wei-Ken Lin

27Patents
3h-index
38Co-inventors
55Inventor score

Filing activity: Jul 29, 2015 → May 23, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9691766B1 Fin field effect transistor and method for fabricating the same Electricity 11 Active
US10340384B2 Method of manufacturing fin field-effect transistor device Electricity 3 Active
US11205597B2 Semiconductor device and method Electricity 3 Active
US10304677B2 Low-k feature formation processes and structures formed thereby Electricity 3 Active
US10658252B2 Semiconductor structure and method for forming the same Electricity 2 Active
US10497577B2 Fin field-effect transistor device and method Electricity 2 Active
US10797175B2 Fin field-effect transistor device and method Electricity 2 Active
US10269664B2 Semiconductor structure and method for forming the same Electricity 1 Active
US10964548B2 Fin field-effect transistor device and method Electricity 1 Active
US10833170B2 Low-k gate spacer and methods for forming the same Electricity 1 Active
US10950431B2 Low-k feature formation processes and structures formed thereby Electricity 0 Active
US11855182B2 Low-k gate spacer and methods for forming the same Electricity 0 Active
US11342454B2 Semiconductor device and method Electricity 0 Active
US9824943B2 Semiconductor structure and method for forming the same Electricity 0 Active
US11295948B2 Low-K feature formation processes and structures formed thereby Electricity 0 Active
US11705327B2 Low-k feature formation processes and structures formed thereby Electricity 0 Active
US10847634B2 Field effect transistor and method of forming the same Electricity 0 Active
US11735430B2 Fin field-effect transistor device and method Electricity 0 Active
US10504898B2 Fin field-effect transistor structure and method for forming the same Electricity 0 Active
US10490650B2 Low-k gate spacer and methods for forming the same Electricity 0 Active
US10854713B2 Method for forming trench structure of semiconductor device Electricity 0 Active
US11450772B2 Fin field-effect transistor device and method Electricity 0 Active
US11942418B2 Semiconductor structure and method for making the same Electricity 0 Active
US9871100B2 Trench structure of semiconductor device having uneven nitrogen distribution liner Electricity 0 Active
US9991154B2 Method for fabricating a fin field effect transistor and a shallow trench isolation Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.