Optoelectronic device comprising a light-emitting component and a transistor

US10497743B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Ivan-Christophe Robin · Grenoble, FR
• Hubert Bono · Grenoble, FR
• Thierry Bouchet · Bouaye, FR
• Matthew Charles · St. Louis Park, US
• Rene Escoffier · Mauzac, FR
• Erwan MORVAN · Grenoble, FR

Key dates

• Filing date: Dec 1, 2016
• Grant date: Dec 3, 2019
• Expiry date: Dec 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8312

Abstract

An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.