Ivan-Christophe Robin
53Patents
7h-index
48Co-inventors
68Inventor score
Filing activity: Jul 15, 2009 → Jun 25, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9601542B2 | P-N junction optoelectronic device for ionizing dopants by field effect | Emerging Cross-Sectional Technologies | 24 | Active |
| US9130099B2 | Semiconductor structure for emitting light, and method for manufacturing such a structure | Electricity | 16 | Active |
| US9401454B2 | Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure | Electricity | 15 | Active |
| US9711694B2 | Optoelectronic device with light-emitting diodes | Electricity | 12 | Active |
| US10050080B2 | Optoelectronic device and method for manufacturing same | Electricity | 10 | Active |
| US9960152B2 | Optoelectronic device with light-emitting diodes comprising at least one zener diode | Electricity | 10 | Active |
| US9537050B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 8 | Active |
| US10468436B2 | Method of manufacturing a LED matrix display device | Electricity | 5 | Active |
| US8232560B2 | Light-emitting diode in semiconductor material | Emerging Cross-Sectional Technologies | 5 | Active |
| US10535709B2 | Optoelectronic device with light-emitting diodes | Electricity | 3 | Active |
| US10580931B2 | Method for making a gallium nitride light-emitting diode | Electricity | 2 | Active |
| US10685945B2 | Illuminated faceplate and method for producing such an illuminated faceplate | Electricity | 2 | Active |
| US11164506B2 | Optoelectronic device | Physics | 1 | Active |
| US10629773B2 | Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone | Electricity | 1 | Active |
| US11527685B2 | Emitting devices, associated display screen and methods for fabricating an emitting device | Electricity | 1 | Active |
| US9515220B2 | Light emitting diode with doped quantum wells and associated manufacturing method | Electricity | 1 | Active |
| US10468452B2 | Method of manufacturing a LED-based emissive display device | Electricity | 1 | Active |
| US9967937B2 | Light-emitting device | Electricity | 1 | Active |
| US9608037B2 | Mesa structure diode with approximately plane contact surface | Electricity | 1 | Active |
| US10276745B2 | Light emitting diode including wavelength conversion layers | Electricity | 1 | Active |
| US11522111B2 | Optoelectronic device | Electricity | 0 | Active |
| US10396239B2 | Optoelectronic light-emitting device | Electricity | 0 | Active |
| US10937827B2 | Pseudo-substrate for optoelectronic device and its manufacturing method | Electricity | 0 | Active |
| US10497743B2 | Optoelectronic device comprising a light-emitting component and a transistor | Electricity | 0 | Active |
| US11430373B2 | LED display device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.