Semiconductor power device
US10497777B2 · kind B2 · utility
0Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
A semiconductor power device includes an n-type drift layer, a plurality of first p-doped regions, a plurality of n-doped regions, a plurality of second p-doped regions, a gate dielectric layer, a gate electrode, an interlayer dielectric layer and a plurality of source contacts. Each first p-doped region includes a first p-doped portion and a plurality of first p-doped arms extending outwards from the first p-doped portion. Each n-doped region includes an n-doped portion and a plurality of n-doped arms extending outwards from the n-doped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.