Semiconductor material including different crystalline orientation zones and related production process
US10497833B2 · kind B2 · utility
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1References
27Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 8, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.