Manufacturing techniques and corresponding devices for magnetic tunnel junction devices

US10497861B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Harry-Hak-Lay Chuang · Austin, US
• Hung Cho Wang · Taipei, TW
• Tien-Wei Chiang · Taipei, TW
• Wen-Chun You · Zilongting, TW

Key dates

• Filing date: May 22, 2017
• Grant date: Dec 3, 2019
• Expiry date: May 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

Some embodiments relate to a magnetoresistive random-access memory (MRAM) cell. The cell includes a bottom electrode having a central bottom electrode portion surrounded by a peripheral bottom electrode portion. Step regions of the conductive bottom electrode couple the central and peripheral bottom electrode portions to one another such that an upper surface of the central portion is recessed relative to an upper surface of the peripheral portion. A magnetic tunneling junction (MTJ) has MTJ outer sidewalls which are disposed over the bottom central electrode portion and which are arranged between the step regions. A top electrode is disposed over an upper surface of the MTJ. Other devices and methods are also disclosed.