Resistance change memory devices
US10497864B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | May 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A resistance change memory element includes a lower electrode, a variable resistive layer disposed on the lower electrode and configured to include an oxygenated carbon structure, a barrier layer disposed on the variable resistive layer and configured to include an oxygen containable material that is able to be reversibly oxidized and reduced, and an upper electrode disposed on the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.