Methods and apparatus for patterned wafer characterization
US10502694B2 · kind B2 · utility
5Cited by
5References
27Claims
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Key dates
| Filing date | Aug 1, 2014 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | May 19, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.