Photolithographic patterning of devices
US10503074B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a device includes providing a fluorinated material layer over the device substrate having one or more target areas for patterning. One or more lift-off structures are formed at least in part by developing a first pattern of one or more open areas in the fluorinated material layer in alignment with the one or more target areas by contact with a developing agent including a fluorinated solvent which dissolves the fluorinated material at a first rate. After patterning, the lift-off structures are removed by contact with a lift-off agent including a fluorinated solvent wherein the lift-off agent dissolves the fluorinated material at a second rate that is at least 150 nm/sec and higher than the first rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.