Inventor · Pittsford, NY, US

Diane C. Freeman

36Patents
11h-index
22Co-inventors
75Inventor score

Filing activity: Mar 1, 2000 → Oct 28, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6561607B1 Apparatus and method for maintaining a substantially constant closely spaced working distance between an inkjet printhead and a printing receiver Performing Operations; Transporting 35 Expired
US8017183B2 Organosiloxane materials for selective area deposition of inorganic materials Chemistry; Metallurgy 30 Active
US9899636B2 Photolithographic patterning of organic electronic devices Emerging Cross-Sectional Technologies 21 Active
US8207063B2 Process for atomic layer deposition Performing Operations; Transporting 20 Active
US6428135B1 Electrical waveform for satellite suppression Performing Operations; Transporting 20 Expired
US6352330B1 Ink jet plate maker and proofer apparatus and method Performing Operations; Transporting 18 Expired
US7422777B2 N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 17 Active
US8030212B2 Process for selective area deposition of inorganic materials Electricity 16 Active
US7972898B2 Process for making doped zinc oxide Performing Operations; Transporting 14 Active
US7326956B2 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 14 Expired
US6450602B1 Electrical drive waveform for close drop formation Performing Operations; Transporting 12 Expired
US7858144B2 Process for depositing organic materials Performing Operations; Transporting 9 Active
US10468637B2 Color OLED display with a larger aperture ratio Emerging Cross-Sectional Technologies 8 Active
US7198977B2 N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 8 Expired
US9104104B2 Method of patterning a device Physics 8 Active
US7579619B2 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 7 Expired
US7851380B2 Process for atomic layer deposition Electricity 6 Active
US7846644B2 Photopatternable deposition inhibitor containing siloxane Physics 5 Active
US9122167B2 Method of patterning a device Physics 4 Active
US7629605B2 N-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 4 Active
US8129098B2 Colored mask combined with selective area deposition Electricity 3 Active
US10503074B2 Photolithographic patterning of devices Emerging Cross-Sectional Technologies 2 Active
US7981719B2 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 1 Active
US10854854B2 Photolithographic patterning of organic electronic devices Emerging Cross-Sectional Technologies 1 Active
US7745821B2 Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.