Patent · US Active

Semiconductor memory device

US10503685B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 31, 2016
Grant dateDec 10, 2019
Priority date
Expiry dateApr 1, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2213/0042
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor memory device includes a first tube, a case, a substrate, a memory, a controller, and a first layer. The case is connected to the first tube. The substrate includes a first portion inside the first tube. The first layer covers an inner face of the first tube, is interposed between the first portion and the first tube, and has a thermal conductivity higher than a thermal conductivity of the first tube.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.