Fin Field-Effect Transistor device and method of forming the same
US10504782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Aug 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.