Fin field-effect transistor structure and method for forming the same
US10504898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field-effect transistor (FinFET) structure and a method for forming the same are provided. The FinFET structure includes a first fin structure that protrudes from a first region of a substrate. A second fin structure protrudes from a second region of the substrate. Isolation regions cover lower portions of the first fin structure and the second fin structure and leave upper portions of the first fin structure and the second fin structure above the isolation regions. A first liner layer is positioned between the lower portion of the first fin structure and the isolation regions in the first region. A second liner layer covers the lower portion of the second fin structure and is positioned between the second fin structure and the isolation regions in the second region. The first liner layer and the second liner layer are formed of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.