Patent · US Active

Semiconductor device and method of manufacturing the same

US10504916B2 · kind B2 · utility

1Cited by

0References

9Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Zongliang Huo · 红钢城街道, CN
Tianchun Ye · Beijing, CN

Key dates

Filing date	Nov 23, 2015
Grant date	Dec 10, 2019
Priority date	—
Expiry date	Nov 23, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A three-dimensional memory device and method of manufacturing the same, an isolation structure is embedded between the common source region and the substrate thereunder, which can inhibit the undesired diffusion of impurities during the implantation of the common source region, avoiding operation failure due to excessive diffusion of impurities. In programming and reading states of the three-dimensional memory device, electrons flow from the common source region to bit line; while in erase states, holes are injected from the substrate. Due to the isolation structure, the three-dimensional memory device achieves spatial separation of electrons from holes required for programming/erasing, improving the erasing efficiency and the integration as well.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.