Increased optical path for long wavelength light by grating structure
US10504952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Some aspects of the present disclosure relate to an image sensor that includes a semiconductor substrate having a frontside and a backside. A photodetector is arranged in the semiconductor substrate between the frontside and the backside. An interconnect structure is arranged beneath the frontside of the semiconductor substrate such that the frontside of the semiconductor substrate is arranged between the interconnect structure and the backside of the semiconductor substrate. A lower ring structure extends into the backside of the semiconductor substrate and laterally surrounds the photodetector. A grating structure, which is surrounded by the lower ring structure, extends from the backside of the substrate to a position within the photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.