Forming semiconductor structures with semimetal features

US10504999B2 · kind B2 · utility

Assignees

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW
• National Taiwan University · TW

Inventors

• Che-Wei Yang · New Taipei, TW
• Hao-Hsiung Lin · Taipei, TW

Key dates

• Filing date: Mar 15, 2018
• Grant date: Dec 10, 2019
• Expiry date: Mar 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/02

Abstract

The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.