Che-Wei Yang
32Patents
3h-index
19Co-inventors
52Inventor score
Filing activity: Apr 15, 2016 → May 12, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10586664B2 | Luminous keyboard | Electricity | 12 | Active |
| US9711607B1 | One-dimensional nanostructure growth on graphene and devices thereof | Electricity | 7 | Active |
| US10586662B2 | Keyboard device | Electricity | 3 | Active |
| US10607793B1 | Keyboard device | Electricity | 3 | Active |
| US10516050B2 | Method for forming stressor, semiconductor device having stressor, and method for forming the same | Electricity | 3 | Active |
| US11152168B1 | Keyboard device | Electricity | 3 | Active |
| US10340100B1 | Keyboard device | Electricity | 2 | Active |
| US10832957B2 | Method for direct forming stressor, semiconductor device having stressor, and method for forming the same | Electricity | 1 | Active |
| US10032577B2 | Illuminated keyboard | Electricity | 1 | Active |
| US10147568B1 | Keyboard device | Electricity | 1 | Active |
| US9965046B2 | Keyboard and notebook computer with same | Electricity | 1 | Active |
| US9847188B2 | Key structure | Electricity | 1 | Active |
| US10332701B2 | Luminous keyboard | Electricity | 1 | Active |
| US12027554B2 | Composite deep trench isolation structure in an image sensor | Electricity | 1 | Active |
| US11177083B1 | Key structure | Electricity | 1 | Active |
| US9847190B1 | Mechanism to raise and lower the height of keys within a keyboard | Electricity | 1 | Active |
| US12272715B2 | High reflectance isolation structure to increase image sensor performance | Electricity | 0 | Active |
| US10347538B2 | Method for direct forming stressor, semiconductor device having stressor, and method for forming the same | Electricity | 0 | Active |
| US11145475B1 | Keyboard device and key structure thereof | Electricity | 0 | Active |
| US11152251B2 | Method for manufacturing semiconductor device having via formed by ion beam | Electricity | 0 | Active |
| US10254467B2 | Backlight structure | Physics | 0 | Active |
| US10510611B2 | Method for direct forming stressor, semiconductor device having stressor, and method for forming the same | Electricity | 0 | Active |
| US11538938B2 | Method for forming stressor, semiconductor device having stressor, and method for forming the same | Electricity | 0 | Active |
| US10504999B2 | Forming semiconductor structures with semimetal features | Electricity | 0 | Active |
| US11626320B2 | Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (STI) | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.