Method for preparing cap-layer-structured gallium oxide field effect transistor

US10505024B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yuanjie Lv · Shijiazhuang, CN
• Xubo Song · Shijiazhuang, CN
• Zhihong Feng · Shijiazhuang, CN
• Yuangang Wang · Nanhu, CN
• Xin Tan · Beijing, CN
• Xingye Zhou · Shijiazhuang, CN

Key dates

• Filing date: Oct 27, 2017
• Grant date: Dec 10, 2019
• Expiry date: Nov 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02581
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for preparing a cap-layer-structured gallium oxide field effect transistor, includes: removing a gallium oxide channel layer and a gallium oxide cap layer from a passive area of a gallium oxide epitaxial wafer; respectively removing the gallium oxide cap layer corresponding to a source region of the gallium oxide epitaxial wafer and the gallium oxide cap layer corresponding to a drain region of the gallium oxide epitaxial wafer; respectively doping a portion of the gallium oxide channel layer corresponding to the source region and a portion of the gallium oxide channel layer corresponding to the drain region with an N-type impurity; respectively capping an upper surface of the gallium oxide channel layer corresponding to the source region and an upper surface of the gallium oxide channel layer corresponding to the drain region with a first metal layer to respectively form a source and a drain; and forming a gate.