THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
37Patents
37Active
37Granted
54Portfolio score
Filing activity: Feb 17, 2012 → Jan 8, 2025
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9349825B2 | Method for manufacturing graphene transistor based on self-aligning technology | Electricity | 5 | Active |
| US10868497B2 | Unbalanced terahertz frequency doubler circuit with power handling capacity | Electricity | 2 | Active |
| US12025501B2 | Three-dimensional displacement compensation method for microscopic thermoreflectance thermography and control device | Physics | 0 | Active |
| US9242901B2 | Refined white ceramic material and method for preparing same | Chemistry; Metallurgy | 0 | Active |
| US11781240B2 | Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture | Emerging Cross-Sectional Technologies | 0 | Active |
| US12188145B2 | Device and method for continuous VGF crystal growth through reverse injection synthesis | Chemistry; Metallurgy | 0 | Active |
| US12098478B2 | Apparatus for preparing a single crystal comprising a volatilization chamber and a plurality of crystal pieces fixed by combined fixtures located in a solid connection chamber | Chemistry; Metallurgy | 0 | Active |
| US12116690B2 | Process for synthesizing indium phosphide by liquid phosphorus injection method | Chemistry; Metallurgy | 0 | Active |
| US11733298B2 | Two-port on-wafer calibration piece circuit model and method for determining parameters | Physics | 0 | Active |
| US12112944B2 | Preparation method of GaN field effect transistor based on diamond substrate | Electricity | 0 | Active |
| US11349043B2 | Method for manufacturing tilted mesa and method for manufacturing detector | Electricity | 0 | Active |
| US10505024B2 | Method for preparing cap-layer-structured gallium oxide field effect transistor | Electricity | 0 | Active |
| US11242615B2 | Growth method and apparatus for preparing high-yield crystals | Chemistry; Metallurgy | 0 | Active |
| US11881769B2 | Multi-level converter control method | Electricity | 0 | Active |
| US11417779B2 | Gallium oxide SBD terminal structure and preparation method | Emerging Cross-Sectional Technologies | 0 | Active |
| US12268035B2 | Ultraviolet detector and preparation method therefor | Electricity | 0 | Active |
| US11456387B2 | Normally-off gallium oxide field-effect transistor structure and preparation method therefor | Electricity | 0 | Active |
| US11971451B2 | Method for determining parameters in on-wafer calibration piece model | Physics | 0 | Active |
| US11817848B2 | Resonator and filter | Electricity | 0 | Active |
| US10519563B2 | Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis | Chemistry; Metallurgy | 0 | Active |
| US11282977B2 | Silicon carbide detector and preparation method therefor | Emerging Cross-Sectional Technologies | 0 | Active |
| US11843158B2 | Trisection power divider with isolation and microwave transmission system | Electricity | 0 | Active |
| US11757048B1 | Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal | Electricity | 0 | Active |
| US12289817B1 | Microwave heating cavity | Electricity | 0 | Active |
| US10648100B1 | Method for carrying out phosphide in-situ injection synthesis by carrier gas | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.