Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing method
US10508362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2016 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Mar 25, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h4≤3 pa4(1−v2){(5+v)/(1+v)}/16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.