Inventor · Tokyo, JP

Kenichi Hamano

17Patents
2h-index
28Co-inventors
50Inventor score

Filing activity: Feb 15, 2010 → Apr 5, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8569106B2 Method for manufacturing silicon carbide semiconductor device Electricity 4 Active
US9988738B2 Method for manufacturing SiC epitaxial wafer Electricity 3 Active
US9400172B2 Film thickness measurement method Physics 2 Active
US9422640B2 Single-crystal 4H-SiC substrate Emerging Cross-Sectional Technologies 1 Active
US10950435B2 SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus Emerging Cross-Sectional Technologies 0 Active
US12369350B2 Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less Electricity 0 Active
US8679952B2 Method of manufacturing silicon carbide epitaxial wafer Electricity 0 Active
US10910218B2 SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus General 0 Revoked
US9957638B2 Method for manufacturing silicon carbide semiconductor device Electricity 0 Active
US10229830B2 Method of manufacturing silicon carbide epitaxial wafer Physics 0 Active
US9752254B2 Method for manufacturing a single-crystal 4H—SiC substrate Emerging Cross-Sectional Technologies 0 Active
US10711372B2 Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus Electricity 0 Active
US10508362B2 Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing method Chemistry; Metallurgy 0 Active
US10707075B2 Semiconductor wafer, semiconductor device, and method for producing semiconductor device Electricity 0 Active
US11088073B2 Semiconductor device Electricity 0 Active
US10370775B2 Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus Electricity 0 Active
US9903048B2 Single-crystal 4H-SiC substrate Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.