High reliable OTP memory with low reading voltage
US10510427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5252
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to the technical field of integrated circuits. Disclosed is a one-time programmable memory with a high reliability and a low reading voltage, comprising: a first MOS transistor, a second MOS transistor, and an antifuse component. A gate terminal of the first MOS transistor is connected to a second connecting line (WS), a first connection terminal of the first MOS transistor is connected to the antifuse component, the antifuse component is connected to a first connecting line (WP), and a second connection terminal of the first MOS transistor is connected to a third connecting line (BL). A first connection terminal of the second MOS transistor is connected to a fourth connecting line (BR), and a second connection terminal of the second MOS transistor is connected to a third connecting line (BL). The invention further comprises a voltage limiting device with a control terminal and two connection terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.