Inventor · Taipei, TW

Jack Peng

61Patents
22h-index
25Co-inventors
88Inventor score

Filing activity: Jun 6, 1995 → Jul 19, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6992925B2 High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline Physics 239 Expired
US6667902B2 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric Electricity 123 Expired
US5587945A CMOS EEPROM cell with tunneling window in the read path Physics 98 Expired
US6671040B2 Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric Electricity 74 Expired
US6777757B2 High density semiconductor memory cell and memory array using a single transistor Physics 73 Expired
US6845151B2 Picture/sound output equipment with caller identification and volume adjustment functions Electricity 68 Expired
US6700151B2 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric Electricity 68 Expired
US6972986B2 Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown Electricity 67 Expired
US6940751B2 High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown Physics 60 Expired
US7269047B1 Memory transistor gate oxide stress release and improved reliability Physics 60 Expired
US6650143B1 Field programmable gate array based upon transistor gate oxide breakdown Electricity 55 Expired
US6822888B2 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric Electricity 51 Expired
US6898116B2 High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection Physics 48 Expired
US6798693B2 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric Electricity 46 Expired
US7064973B2 Combination field programmable gate array allowing dynamic reprogrammability Electricity 45 Expired
US6856540B2 High density semiconductor memory cell and memory array using a single transistor Physics 37 Expired
US6956258B2 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric Electricity 35 Expired
US6791891B1 Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage Physics 33 Expired
US6252273A Nonvolatile reprogrammable interconnect cell with FN tunneling device for programming and erase Electricity 26 Expired
US7471541B2 Memory transistor gate oxide stress release and improved reliability Physics 26 Active
US7031209B2 Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric Physics 26 Expired
US6766960B2 Smart card having memory using a breakdown phenomena in an ultra-thin dielectric Electricity 25 Expired
US5838040A Nonvolatile reprogrammable interconnect cell with FN tunneling in sense Electricity 22 Expired
US6526151B1 High stability loudspeaker Electricity 21 Expired
US5851886A Method of large angle tilt implant of channel region Electricity 19 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.