Mask scheme for cut pattern flow with enlarged EPE window
US10510540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jul 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor devices comprising etching a hardmask and spin-on-carbon layer through an opening in a photoresist to expose a gapfill material. The photoresist, spin-on-carbon layer and gapfill material are removed. A new spin-on-carbon layer, hardmask and photoresist are formed with an opening over a spacer mandrel. The hardmask, spin-on-carbon layer are etched through the opening and the layers and spacer mandrel are removed. An etch stop layer and oxide layer are removed and a height of the spacer mandrel and gapfill material are reduced exposing portions of the substrate. The exposed portions of the substrate are fin etched and the layers removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.