Patent assignee · US · COMPANY

Micromaterials LLC

24Patents
24Active
24Granted
48Portfolio score

Filing activity: Dec 7, 2017 → Jun 11, 2021

Most-cited patents

PatentTitleAreaCited byStatus
US10720341B2 Gas delivery system for high pressure processing chamber Electricity 18 Active
US10529603B2 High pressure wafer processing systems and related methods Electricity 17 Active
US10224224B2 High pressure wafer processing systems and related methods Electricity 17 Active
US10510540B2 Mask scheme for cut pattern flow with enlarged EPE window Electricity 9 Active
US11049695B2 Metal contact landing structure Electricity 6 Active
US10600688B2 Methods of producing self-aligned vias Electricity 4 Active
US10692728B2 Use of selective aluminum oxide etch Electricity 3 Active
US10553485B2 Methods of producing fully self-aligned vias and contacts Electricity 3 Active
US10593594B2 Selectively etched self-aligned via processes Electricity 2 Active
US11437273B2 Self-aligned contact and contact over active gate structures Electricity 1 Active
US10790191B2 Selective removal process to create high aspect ratio fully self-aligned via Electricity 1 Active
US10892187B2 Method for creating a fully self-aligned via Electricity 1 Active
US10699953B2 Method for creating a fully self-aligned via Electricity 1 Active
US11437274B2 Fully self-aligned via Electricity 0 Active
US10573555B2 Methods of producing self-aligned grown via Electricity 0 Active
US11062942B2 Methods for controllable metal and barrier-liner recess Electricity 0 Active
US10522404B2 Fully self-aligned via Electricity 0 Active
US10892183B2 Methods for removing metal oxides Electricity 0 Active
US11114333B2 Method for depositing and reflow of a high quality etch resistant gapfill dielectric film Electricity 0 Active
US11705366B2 Methods for controllable metal and barrier-liner recess Electricity 0 Active
US10410921B2 Fully self-aligned via Electricity 0 Active
US11164938B2 DRAM capacitor module Electricity 0 Active
US11037825B2 Selective removal process to create high aspect ratio fully self-aligned via Electricity 0 Active
US11527421B2 Gas delivery system for high pressure processing chamber Electricity 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.