Dummy fin structures and methods of forming same
US10510580B2 · kind B2 · utility
5Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Aug 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.