Shwang-Ming Jeng
38Patents
7h-index
50Co-inventors
72Inventor score
Filing activity: Jul 12, 2000 → Apr 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6319809A | Method to reduce via poison in low-k Cu dual damascene by UV-treatment | Electricity | 48 | Expired |
| US6372661B1 | Method to improve the crack resistance of CVD low-k dielectric constant material | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6846756B2 | Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers | Electricity | 19 | Expired |
| US6821905B2 | Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer | Electricity | 16 | Expired |
| US6657284B1 | Graded dielectric layer and method for fabrication thereof | Electricity | 12 | Expired |
| US6753260B1 | Composite etching stop in semiconductor process integration | Electricity | 11 | Expired |
| US7626245B2 | Extreme low-k dielectric film scheme for advanced interconnect | Electricity | 7 | Active |
| US7365026B2 | CxHy sacrificial layer for cu/low-k interconnects | Electricity | 6 | Expired |
| US7723226B2 | Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio | Electricity | 6 | Active |
| US10510580B2 | Dummy fin structures and methods of forming same | Electricity | 5 | Active |
| US7646097B2 | Bond pads and methods for fabricating the same | Electricity | 5 | Expired |
| US7805692B2 | Method for local hot spot fixing | Physics | 5 | Active |
| USRE42514E1 | Extreme low-K dielectric film scheme for advanced interconnects | General | 2 | Active |
| US6620745B2 | Method for forming a blocking layer | Electricity | 2 | Expired |
| US7465676B2 | Method for forming dielectric film to improve adhesion of low-k film | Electricity | 2 | Active |
| US8993435B2 | Low-k Cu barriers in damascene interconnect structures | Electricity | 2 | Active |
| US11664268B2 | Dummy fin structures and methods of forming same | Electricity | 1 | Active |
| US8105947B2 | Post etch dielectric film re-capping layer | Electricity | 1 | Active |
| US7485949B2 | Semiconductor device | Electricity | 1 | Active |
| US8481412B2 | Method of and apparatus for active energy assist baking | Electricity | 1 | Active |
| US8673783B2 | Metal conductor chemical mechanical polish | Electricity | 1 | Active |
| US11069558B2 | Dummy fin structures and methods of forming same | Electricity | 1 | Active |
| US9589856B2 | Automatically adjusting baking process for low-k dielectric material | Electricity | 1 | Active |
| US9368452B2 | Metal conductor chemical mechanical polish | Electricity | 0 | Active |
| US10144109B2 | Polisher, polishing tool, and polishing method | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.