Integrated circuit (IC) structure for high performance and functional density
US10510592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2016 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jul 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) provides high performance and high functional density. A first back-end-of-line (BEOL) interconnect structure and a second BEOL interconnect structure are respectively under and over a semiconductor substrate. A first electronic device and a second electronic device are between the semiconductor substrate and respectively a bottom of the first BEOL interconnect structure and a top of the second BEOL interconnect structure. A through substrate via (TSV) extends through the semiconductor substrate, from the first BEOL interconnect structure to the second BEOL interconnect structure. A method for manufacturing the IC is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.