Semiconductor device and method
US10510604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.