Contact structures
US10510613B2 · kind B2 · utility
0Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jan 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a contact over an active gate structure and methods of manufacture. The structure includes: an active gate structure composed of conductive material located between sidewall material; an upper sidewall material above the sidewall material, the upper sidewall material being different material than the sidewall material; and a contact structure in electrical contact with the conductive material of the active gate structure. The contact structure is located between the sidewall material and between the upper sidewall material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.