Semiconductor device with common active area and method for manufacturing the same
US10510776B2 · kind B2 · utility
2Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a pair of transistor devices and an isolation region. The pair of transistor devices are disposed over the substrate. Each of the pair of the transistor devices includes a channel, a gate electrode over the channel, and a source/drain region alongside the gate electrode. The isolation region is disposed between the source/drain regions of the pair of the transistor devices. The isolation region has a first doping type opposite to a second doping type of the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.