Inventor · Taipei, TW

Jack Liu

65Patents
7h-index
42Co-inventors
68Inventor score

Filing activity: Mar 26, 2007 → Jan 11, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7852661B2 Write-assist SRAM cell Electricity 25 Active
US10700207B2 Semiconductor device integrating backside power grid and related integrated circuit and fabrication method Electricity 21 Active
US8570791B2 Circuit and method of word line suppression Physics 20 Active
US9064550B2 Method and apparatus for word line suppression Physics 12 Active
US8467257B1 Circuit and method for generating a sense amplifier enable signal based on a voltage level of a tracking bitline Physics 10 Active
US7808812B2 Robust 8T SRAM cell Physics 10 Active
US7650464B2 Object relocation guided by data cache miss profile Physics 7 Active
US8296698B2 High-speed SRAM Physics 6 Active
US9727683B2 Integrated circuit having a plurality of conductive segments Electricity 5 Active
US8570784B2 Differential ROM Physics 4 Active
US11152348B2 Integrated circuit with mixed row heights Electricity 4 Active
US8305829B2 Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same Physics 3 Active
US9887863B2 Transceiver group and associated router Electricity 3 Active
US10847575B2 Method and related apparatus for improving memory cell performance in semiconductor-on-insulator technology Physics 3 Active
US10599796B2 Metastable flip-flop based true random number generator (TRNG) structure and compiler for same Physics 3 Active
US11423204B1 System and method for back side signal routing Physics 2 Active
US10944007B2 Silicon on insulator semiconductor device with mixed doped regions Electricity 2 Active
US8305820B2 Switched capacitor based negative bitline voltage generation scheme Physics 2 Active
US10535775B2 Silicon on insulator semiconductor device with mixed doped regions Electricity 2 Active
US11887978B2 Power switch for backside power distribution Electricity 2 Active
US10510776B2 Semiconductor device with common active area and method for manufacturing the same Electricity 2 Active
US10854259B2 Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM) Electricity 2 Active
US11508714B2 Semiconductor devices and methods related thereto Electricity 1 Active
US11121256B2 Semiconductor device integrating backside power grid and related integrated circuit and fabrication method Electricity 1 Active
US11616631B2 Integrated circuit with radio frequency interconnect Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.