Absorption enhancement structure for image sensor

US10510799B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Chung Su · Tainan, TW
• Hung-Wen Hsu · Tainan, TW
• Jiech-Fun Lu · 巷口, TW
• Shih Pei Chou · Tainan, TW

Key dates

• Filing date: May 23, 2019
• Grant date: Dec 17, 2019
• Expiry date: May 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate and an image sensing element disposed within the substrate. The substrate has sidewalls defining a plurality of protrusions over the image sensing element. A first one of the plurality of protrusions including a first sidewall having a first segment. A line that extends along the first segment intersects a second sidewall of the first one of the plurality of protrusions that opposes the first sidewall.