N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer
US10510830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Sep 2, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (Ω·cm), the slope of resistivity is 0 to −1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.