Laser device and process for fabricating such a laser device

US10511147B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA
• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Thomas Ferrotti · Grenoble, FR
• Badhise Ben Bakir · Brézins, FR
• Alain Chantre · Seyssinet-Pariset, FR
• Sebastien Cremer · Hameau du Château, FR
• Hélène Duprez · Seyssinet-Pariset, FR

Key dates

• Filing date: May 30, 2018
• Grant date: Dec 17, 2019
• Expiry date: May 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/166
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).