Resistive memory device and method of fabricating the same
US10515695B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 6, 2019 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A resistive memory device and a fabricating method thereof are provided. The resistive memory device includes: a first electrode electrically coupled with a first wire; a second electrode facing the first electrode and electrically coupled with a second wire, the second electrode including an oxygen vacancy reservoir and a contact electrode; and a memory cell including a variable resistive layer and being disposed between the first electrode and the second electrode. The variable resistive layer has a conductive filament, which includes oxygen vacancies and connects the first electrode and the second electrode. The oxygen vacancy reservoir is disposed on the variable resistive layer, and the contact electrode is coupled to the oxygen vacancy reservoir and the second wire. The oxygen vacancy reservoir has a volume or oxidizing power to exchange a limited amount of oxygen ions and oxygen vacancies required for switching the conductive filament with the variable resistive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.