Apparatuses and methods to control operations performed on resistive memory cells
US10515697B1 · kind B1 · utility
6Cited by
38References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Jun 29, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include apparatuses having a resistive memory device and methods to apply a combination of voltage stepping current stepping and pulse width stepping during an operation of changing a resistance of a memory cell of the resistive memory device. The apparatuses also include a write termination circuit to limit drive current provided to a memory cell of the resistive memory device during a particular time of an operation performed on the memory cell. The apparatuses further include a programmable variable resistor and resistor control circuit that operate during sensing operation of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.