Inventor · Portland, OR, US

Fatih Hamzaoglu

41Patents
6h-index
72Co-inventors
72Inventor score

Filing activity: Sep 29, 2000 → Oct 17, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6519176B1 Dual threshold SRAM cell for single-ended sensing Physics 30 Expired
US7403426B2 Memory with dynamically adjustable supply Physics 27 Expired
US7079426B2 Dynamic multi-Vcc scheme for SRAM cell stability control Physics 26 Expired
US7177176B2 Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength Physics 14 Expired
US8451670B2 Adaptive and dynamic stability enhancement for memories Physics 12 Active
US6608786B2 Apparatus and method for a memory storage cell leakage cancellation scheme Physics 11 Expired
US10515697B1 Apparatuses and methods to control operations performed on resistive memory cells Physics 6 Active
US6801465B2 Apparatus and method for a memory storage cell leakage cancellation scheme Physics 5 Expired
US9478273B2 Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Physics 5 Active
US9111600B2 Memory cell with improved write margin Physics 5 Active
US9455011B2 Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read current Physics 5 Active
US9286976B2 Apparatuses and methods for detecting write completion for resistive memory Physics 5 Active
US8406073B1 Hierarchical DRAM sensing Physics 4 Active
US7657767B2 Cache leakage shut-off mechanism Emerging Cross-Sectional Technologies 4 Active
US9865322B2 Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Physics 3 Active
US11462541B2 Memory cells based on vertical thin-film transistors Electricity 2 Active
US9978447B2 Memory cell with improved write margin Physics 1 Active
US6351156B1 Noise reduction circuit Physics 1 Expired
US9666268B2 Apparatus for adjusting supply level to improve write margin of a memory cell Physics 1 Active
US9805790B2 Memory cell with retention using resistive memory Physics 1 Active
US8456946B2 NAND logic word line selection Physics 1 Active
US9330747B2 Non-volatile latch using spin-transfer torque memory device Physics 1 Active
US10068628B2 Apparatus for low power write and read operations for resistive memory Physics 1 Active
US9922691B2 Resistive memory write circuitry with bit line drive strength based on storage cell line resistance Physics 1 Active
US9281043B1 Resistive memory write circuitry with bit line drive strength based on storage cell line resistance Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.