Structure and formation method of semiconductor device with resistive element
US10515852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element electrically connected to the conductive feature. A first portion of the resistive element is over the dielectric layer, and a second portion of the resistive element extends towards the conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.