Chii-Ping Chen
40Patents
5h-index
46Co-inventors
69Inventor score
Filing activity: Jan 30, 2003 → Aug 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8304906B2 | Partial air gap formation for providing interconnect isolation in integrated circuits | Electricity | 18 | Active |
| US6756309B1 | Feed forward process control method for adjusting metal line Rs | Electricity | 12 | Expired |
| US6949007B1 | System and method for multi-stage process control in film removal | Performing Operations; Transporting | 5 | Expired |
| US8436473B2 | Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof | Electricity | 5 | Active |
| US10985011B2 | Structure and formation method of semiconductor device with resistive elements | Electricity | 5 | Active |
| US10304772B2 | Semiconductor device structure with resistive element | Electricity | 5 | Active |
| US8617986B2 | Integrated circuits and methods for forming the integrated circuits | Electricity | 4 | Active |
| US11404369B2 | Semiconductor device structure with resistive element | Electricity | 4 | Active |
| US11217482B2 | Method for forming semiconductor device with resistive element | Electricity | 3 | Active |
| US9496217B2 | Method and apparatus of forming a via | Electricity | 3 | Active |
| US11551968B2 | Inter-wire cavity for low capacitance | Electricity | 2 | Active |
| US11694926B2 | Barrier free interface between beol interconnects | Electricity | 2 | Active |
| US10515852B2 | Structure and formation method of semiconductor device with resistive element | Electricity | 2 | Active |
| US9257279B2 | Mask treatment for double patterning design | Electricity | 1 | Active |
| US11798848B2 | Semiconductor device structure with resistive element | Electricity | 1 | Active |
| US10164002B2 | Semiconductor device and layout method | Electricity | 1 | Active |
| US11342222B2 | Self-aligned scheme for semiconductor device and method of forming the same | Electricity | 1 | Active |
| US11362035B2 | Diffusion barrier layer for conductive via to decrease contact resistance | Electricity | 0 | Active |
| US12165947B2 | Semiconductor devices and method for forming the same | Electricity | 0 | Active |
| US11830770B2 | Self-aligned scheme for semiconductor device and method of forming the same | Electricity | 0 | Active |
| US12040178B2 | Method for manufacturing semiconductor structure with resistive elements | Electricity | 0 | Active |
| US12368103B2 | Diffusion barrier layer for conductive via to decrease contact resistance | Electricity | 0 | Active |
| US8499261B2 | Method and apparatus of patterning semiconductor device | Physics | 0 | Active |
| US8716862B2 | Integrated circuit including a gate and a metallic connecting line | Electricity | 0 | Active |
| US9553043B2 | Interconnect structure having smaller transition layer via | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.