Metallic sub-collector for HBT and BJT transistors
US10515872B1 · kind B1 · utility
3Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2016 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Feb 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor having an emitter, a base, and a collector, the transistor includes a substrate, a collector contact, a metallic sub-collector coupled to the collector contact, and the metallic sub-collector electrically and thermally coupled to the collector, and an adhesive layer between the substrate and the metallic sub-collector, the adhesive layer bonded to the substrate and in direct contact with the substrate and bonded to the metallic sub-collector and in direct contact with the metallic sub-collector, wherein the adhesive layer comprises an electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.