Semiconductor device and method for manufacturing the same
US10515888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a dielectric interposer, a first interconnection layer, an electronic component, a plurality of electrical conductors and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first interconnection layer is over the first surface of the dielectric interposer. The electronic component is over and electrically connected to the first interconnection layer. The electrical conductors are over the second surface of the dielectric interposer. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first interconnection layer and the electrical conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.