Semiconductor device and methods of manufacture
US10516034B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2018 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.