Inventor · Tainan, TW

Ching-Hwanq Su

73Patents
4h-index
80Co-inventors
69Inventor score

Filing activity: May 6, 2004 → May 21, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9935173B1 Structure and formation method of semiconductor device structure Electricity 18 Active
US10304835B1 Semiconductor device and method Electricity 16 Active
US10833196B2 FinFET structures and methods of forming the same Electricity 5 Active
US11404312B2 Contact plug with impurity variation Electricity 5 Active
US10510621B2 Methods for threshold voltage tuning and structures formed thereby Electricity 4 Active
US11121041B2 Methods for threshold voltage tuning and structure formed thereby Electricity 4 Active
US11289578B2 Selective etching to increase threshold voltage spread Electricity 4 Active
US10504795B2 Method for patterning a lanthanum containing layer Electricity 3 Active
US10504789B1 Pre-deposition treatment for FET technology and devices formed thereby Electricity 3 Active
US10510756B1 Semiconductor device and method Electricity 3 Active
US10516034B2 Semiconductor device and methods of manufacture Electricity 2 Active
US11563120B2 FinFET structures and methods of forming the same Electricity 2 Active
US10867845B2 Semiconductor device and method Electricity 2 Active
US10755938B2 Metal gate and manufacturing method thereof Electricity 2 Active
US10157785B2 Semiconductor device and method Electricity 2 Active
US8652868B2 Implanting method for forming photodiode Emerging Cross-Sectional Technologies 2 Active
US8628998B2 Annealing methods for backside illumination image sensor chips Electricity 2 Active
US10847637B2 Semiconductor device and method Electricity 2 Active
US10692770B2 Geometry for threshold voltage tuning on semiconductor device Electricity 2 Active
US10497811B2 FinFET structures and methods of forming the same Electricity 1 Active
US11588038B2 Circuit structure with gate configuration Electricity 1 Active
US11011611B2 Semiconductor device with low resistivity contact structure Electricity 1 Active
US9396953B2 Conformity control for metal gate stack Electricity 1 Active
US11270994B2 Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor Electricity 1 Active
US11289480B2 Semiconductor device and method Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.