Silicon carbide semiconductor device
US10516046B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 19, 2019 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Jul 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.