Masahiro Sugimoto
93Patents
16h-index
120Co-inventors
87Inventor score
Filing activity: Feb 13, 1981 → May 27, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5065223A | Packaged semiconductor device | Electricity | 189 | Expired |
| US4698663A | Heatsink package for flip-chip IC | Emerging Cross-Sectional Technologies | 105 | Expired |
| US5081067A | Ceramic package type semiconductor device and method of assembling the same | Emerging Cross-Sectional Technologies | 89 | Expired |
| US7777252B2 | III-V hemt devices | Electricity | 74 | Active |
| US4827327A | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough | Electricity | 54 | Expired |
| US4875087A | Integrated circuit device having strip line structure therein | Electricity | 41 | Expired |
| US4724472A | Semiconductor device | Emerging Cross-Sectional Technologies | 40 | Expired |
| US9136372B2 | Silicon carbide semiconductor device | Electricity | 32 | Active |
| US4803546A | Heatsink package for flip-chip IC | Electricity | 31 | Expired |
| US4742024A | Semiconductor device and method of producing semiconductor device | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5055914A | Ceramic package type semiconductor device and method of assembling the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4725878A | Semiconductor device | Electricity | 25 | Expired |
| US4688077A | Semiconductor device having radiator | Electricity | 21 | Expired |
| US6568267B2 | Sensing device and sensor apparatus | Physics | 20 | Expired |
| US8008180B2 | Method of forming an OHMIC contact on a P-type 4H-SIC substrate | Emerging Cross-Sectional Technologies | 20 | Active |
| US5096749A | Method of producing a metallization layer structure | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5929385A | AC oxide superconductor wire and cable | Electricity | 15 | Expired |
| US4426657A | Semiconductor device and method for producing same | Electricity | 14 | Expired |
| US4980239A | Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure | Emerging Cross-Sectional Technologies | 12 | Expired |
| US9278555B2 | Printing apparatus and printing method | Performing Operations; Transporting | 9 | Active |
| US8575689B2 | Silicon carbide semiconductor device and manufacturing method of the same | Electricity | 6 | Active |
| US9379181B2 | Semiconductor device | Electricity | 5 | Active |
| US9711262B2 | Compound superconducting wire and method for manufacturing the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US9082815B2 | Semiconductor device having carrier extraction in electric field alleviating layer | Electricity | 5 | Active |
| US8334541B2 | SiC semiconductor device | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.