Tunable resistive element
US10516108B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.