Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis
US10519563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a see…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.