Optical proximity correction methodology using underlying layer information
US10520829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Apr 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Examples of optical proximity correction (OPC) based computational lithography techniques are disclosed herein. An exemplary method includes receiving an IC design layout that includes an IC feature, the IC feature specifying a mask feature for selectively exposing to radiation a portion of a photoresist disposed on a substrate; determining topographical information of an underlying layer disposed on the substrate between the photoresist and the substrate; performing an OPC process on the IC feature to generate a modified IC feature; and providing a modified IC design layout including the modified IC feature for fabricating a mask based on the modified IC design layout. The OPC process may use the topographical information of the underlying layer to compensate for an amount of radiation directed towards the portion of the photoresist so as to expose the portion of the photoresist to a target dosage of radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.