Inventor · Taichung, TW

Hung-Chun Wang

35Patents
15h-index
37Co-inventors
81Inventor score

Filing activity: May 7, 2004 → Jul 17, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8764995B2 Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof Physics 291 Active
US9390217B2 Methodology of optical proximity correction optimization Physics 64 Active
US8627241B2 Pattern correction with location effect Physics 45 Active
US8631360B2 Methodology of optical proximity correction optimization Physics 34 Active
US8468473B1 Method for high volume e-beam lithography Electricity 31 Active
US8601407B2 Geometric pattern data quality verification for maskless lithography Physics 30 Active
US8609308B1 Smart subfield method for E-beam lithography Emerging Cross-Sectional Technologies 29 Active
US8464186B2 Providing electron beam proximity effect correction by simulating write operations of polygonal shapes Electricity 29 Active
US8507159B2 Electron beam data storage system and method for high volume manufacturing Emerging Cross-Sectional Technologies 28 Active
US8841049B2 Electron beam data storage system and method for high volume manufacturing Emerging Cross-Sectional Technologies 27 Active
US8835082B2 Method and system for E-beam lithography with multi-exposure Electricity 27 Active
US8473877B2 Striping methodology for maskless lithography Electricity 26 Active
US9529959B2 System and method for pattern correction in e-beam lithography Electricity 22 Active
US8945803B2 Smart subfield method for E-beam lithography Emerging Cross-Sectional Technologies 21 Active
US9305799B2 Method and system for E-beam lithography with multi-exposure Electricity 21 Active
US8949749B2 Layout design for electron-beam high volume manufacturing Emerging Cross-Sectional Technologies 10 Active
US9262578B2 Method for integrated circuit manufacturing Electricity 7 Active
US10691864B2 Method of post optical proximity correction (OPC) printing verification by machine learning Physics 6 Active
US9026955B1 Methodology for pattern correction Electricity 3 Active
US9411924B2 Methodology for pattern density optimization Physics 3 Active
US9298083B2 Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof Physics 2 Active
US11048161B2 Optical proximity correction methodology using pattern classification for target placement Physics 2 Active
US10520829B2 Optical proximity correction methodology using underlying layer information Physics 2 Active
US10049178B2 Methodology for pattern density optimization Physics 1 Active
US7387855B2 Anti-ESD photomask blank Emerging Cross-Sectional Technologies 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.